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apex microtechnology corporation ? telephone (520) 690-8600 ? fax (520) 888-3329 ? orders (520) 690-8601 ? email prodlit@apexmicrotech.com 1 features ? wide supply range 30v to 100v ? high output current up to 2a continuous ? voltage and current gain ? high slew rate 50v/s minimum ? programmable output current limit ? high power bandwidth 160 khz minimum ? low quiescent current 12ma typical applications ? high voltage instrumentation ? electrostatic transducers & deflection ? programmable power supplies up to 180v p-p description the pb50 is a high voltage, high current amplifer designed to provide voltage and current gain for a small signal, general purpose op amp. including the power booster within the feed - back loop of the driver amplifer results in a composite amplifer with the accuracy of the driver and the extended output voltage range and current capability of the booster. the pb50 can also be used without a driver in some applications, requiring only an external current limit resistor to function properly. the output stage utilizes complementary mosfets, provid - ing symmetrical output impedance and eliminating secondary breakdown limitations imposed by bipolar junction transis - tors. internal feedback and gainset resistors are provided for a pin-strappable gain of 3. additional gain can be achieved with a single external resistor. compensation is not required for most driver/gain confgurations, but can be accomplished with a single external capacitor. although the booster can be confgured quite simply, enormous fexibility is provided through the choice of driver amplifer, current limit, supply voltage, voltage gain, and compensation. this hybrid circuit utilizes a beryllia (beo) substrate, thick flm resistors, ceramic capacitors and semiconductor chips to maximize reliability, minimize size and give top performance. ultrasonically bonded aluminum wires provide reliable inter - connections at all operating temperatures. the 8-pin to-3 package is electrically isolated and hermetically sealed using one-shot resistance welding. the use of compressible isolation washers voids the warranty. typical application figure 1. inverting composite amplifer. 01 ".1 1# $ ' 3 ' 7 */ 3 * 7 m7 */ $0. 7t m7t 3 $- 065 $ $ 3 ( 3 - equivalent schematic external connections */ ("*/ $0. $0.1 2 2 2 2 2 2 2 2 2 2 7t 065 $- m7t , , , 5017*&8 $- 7t */ $0. m7t ("*/ 3 ( $0.1 $ $ 065 3 $- ) 5 5 1 8 8 8 " 1 & 9 . * $ 3 0 5 & $ ) $ 0 .
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apex microtechnology corporation ? 5980 north shannon road ? tucson, arizona 85741 ? usa ? applications hotline: 1 (800) 546-2739 2 pb50 absolute maximum ratings specifications absolute maximum ratings supply voltage, +v s to Cv s 200v output current, within soa 2a power dissipation, internal at t c = 25c 1 35w input voltage, referred to common 15v temperature, pin solder10 sec max 300c temperature, junction 1 150c temperature, storage C65 to +150c operating temperature range, case C55 to +125c specifications parameter test conditions 2 min typ max units input offset voltage, initial .75 1.75 v offset voltage, vs. temperature full temperature range C4.5 C7 mv/c input impedance, dc 25 50 k input capacitance 3 pf closed loop gain range 3 10 25 v/v gain accuracy, internal rg, rf a v = 3 10 15 % gain accuracy, external rf a v = 10 15 25 % phase shift f = 10khz, av cl = 10, c c = 22pf 10 f = 200khz, av cl = 10, c c = 22pf 60 output voltage swing io = 2a v s C11 v s C9 v voltage swing io = 1a v s C10 v s C7 v voltage swing io = .1a v s C8 v s C5 v current, continuous 2 a slew rate full temperature range 50 100 v/s capacitive load full temperature range 2200 pf settling time to .1% r l = 100, 2v step 2 s power bandwidth v c = 100vpp 160 320 khz small signal bandwidth c c = 22pf, a v = 25, vcc = 100 100 khz small signal bandwidth c c = 22pf, a v = 3, vcc = 30 1 mhz power supply voltage, v s 3 full temperature range 30 5 60 100 v current, quiescent v s = 30 9 12 ma v s = 60 12 18 ma v s = 100 17 25 ma thermal resistance, ac junction to case 4 full temp. range, f > 60hz 1.8 2.0 c/w resistance, dc junction to case full temp. range, f < 60hz 3.2 3.5 c/w resistance, junction to air full temperature range 30 c/w temperature range, case meets full range specifcations C25 25 85 c notes: 1. long term operation at the maximum junction temperature will result in reduced product life. derate internal power dissipation to achieve high mttf (mean time to failure). 2. the power supply voltage specifed under typical (typ) applies, t c = 25c unless otherwise noted. 3. +v s and Cv s denote the positive and negative supply rail respectively. 4. rating applies if the output current alternates between both output transistors at a rate faster than 60hz. 5. +v s must be at least 15v above com, Cv s must be at least 30v below com. the pb50 is constructed from mosfet transistors. esd handling procedures must be observed. the internal substrate contains beryllia (beo). do not break the seal. if accidentally broken, do not crush, machine, or subject to temperatures in excess of 850c to avoid generating toxic fumes. caution
apex microtechnology corporation ? telephone (520) 690-8600 ? fax (520) 888-3329 ? orders (520) 690-8601 ? email prodlit@apexmicrotech.com 3 typical performance graphs pb50 m 108&3%&3"5*/( */5&3/"-108&3%*44*1"5*0/ 1 8
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apex microtechnology corporation ? 5980 north shannon road ? tucson, arizona 85741 ? usa ? applications hotline: 1 (800) 546-2739 4 operating considerations pb50 general please read application note 1 "general operating con - siderations" which covers stability, supplies, heat sinking, mounting, current limit, soa interpretation, and specifcation interpretation. visit www.apexmicrotech.com for design tools that help automate tasks such as calculations for stability, internal power dissipation, current limit; heat sink selection; apexs complete application notes library; technical seminar workbook; and evaluation kits. current limit for proper operation, the current limit resistor (r cl ) must be con nected as shown in the external connection diagram. the minimum value is 0.27 with a maximum practical value of 47. for optimum reliability the resistor value should be set as high as possible. the value is calculated as follows: +i l = .65/r cl + .010, Ci l = .65/r cl . safe operating area (soa) note: the output stage is protected against transient fy - back. however, for protection against sustained, high energy fyback, external fast-recovery diodes should be used. composite amplifier considerations cascading two amplifers within a feedback loop has many advantages, but also requires careful consideration of several amplifer and system parameters. the most important of these are gain, stability, slew rate, and output swing of the driver. operating the booster amplifer in higher gains results in a higher slew rate and lower output swing requirement for the driver, but makes stability more diffcult to achieve. gain set r g = [ (av-1) ? 3.1k] C 6.2k r g + 6.2k av = +1 3.1k the boosters closed-loop gain is given by the equation above. the composite amplifers closed loop gain is determined by the feedback network, that is: Crf/ri (inverting) or 1+rf/ri (non-inverting). the driver amplifers effective gain is equal to the composite gain divided by the booster gain. example: inverting confguration (fgure 1) with r i = 2k, r f = 60k, r g = 0 : av (booster) = (6.2k/3.1k) + 1 = 3 av (composite) = 60k/2k = - 30 av (driver) = - 30/3 = -10 stability stability can be maximized by observing the following guidelines: 1. operate the booster in the lowest practical gain. 2. operate the driver amplifer in the highest practical effective gain. 3. keep gain-bandwidth product of the driver lower than the closed loop bandwidth of the booster. 4. minimize phase shift within the loop. a good compromise for (1) and (2) is to set booster gain from 3 to 10 with total (composite) gain at least a factor of 3 times booster gain. guideline (3) implies compensating the driver as required in low composite gain confgurations. phase shift within the loop (4) is minimized through use of booster and loop compensation capacitors cc and cf when required. typical values are 5pf to 33pf. stability is the most diffcult to achieve in a confguration where driver effective gain is unity (ie; total gain = booster gain). for this situation, table 1 gives compensation values for optimum square wave response with the op amp drivers listed. driver c ch c f c c fpbw sr op07 - 22p 22p 4khz 1.5 741 - 18p 10p 20khz 7 lf155 - 4.7p 10p 60khz >60 lf156 - 4.7p 10p 80khz >60 tl070 22p 15p 10p 80khz >60 for: r f = 33k, r i = 3.3k, r g = 22k table 1: typical values for case where op amp effective gain = 1. figure 2. non-inverting composite amplifer. slew rate the slew rate of the composite amplifer is equal to the slew rate of the driver times the booster gain, with a maximum value equal to the booster slew rate. output swing the maximum output voltage swing required from the driver op amp is equal to the maximum output swing from the booster divided by the booster gain. the vos of the booster must also be supplied by the driver, and should be subtracted from the available swing range of the driver. note also that effects of vos drift and booster gain accuracy should be considered when calculating maximum available driver swing. 4611-:50065165%*''&3&/5*"-70-5"(&7 4 ?7 0 7
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45&"%:45"5&5?$ $ unt unt 45&"%:45"5&5?$ $ 45&"%:45"5&5?$ $ unt 40" this data sheet has been carefully checked and is believed to be reliable, however, no responsibility is assumed for possible inaccuracies or omissions. all specifcations are subject to change without notice. pb50u rev i october 2006 ? 2006 apex microtechnology corp. 01 ".1 1# $ ' 3 ' 3 * 7 m7 */ $0. 7t m7t 3 $- 065 $ $ 3 ( 3 - 7 */ ("*/ $0.1 $ $)

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